Ultrafast carrier recombination in highly n-doped Ge-on-Si films
نویسندگان
چکیده
منابع مشابه
Self-organized nanoscale structures in Si/Ge films
Nanotechnologies of the future will demand the creation of large arrays of nanoscale structures and morphologies for electronic and optoelectronic devices. One approach to the creation of such arrays is to ‘‘let nature do it’’. By depositing on each other semiconductor materials that differ slightly in lattice constant, one can use the resulting lattice strain to obtain arrays of threedimension...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2019
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5088012